Agenda

Networking & Keynotes and Panel Discussion


The first day begins with an interactive examination of power electronics design, revealing state-of-the-art developments, practical implementations, semiconductors, and forward-thinking potential bringing vendors and users to connect, discuss, and build relationships. We will have keynote sessions and a panel discussion in the afternoon.

A networking reception will follow where attendees can engage with other industry C-levels in this pivotal domain.

On Sep 18 participation in the Keynote Sessions/Panel Discussion and the Networking event is reserved for C-Levels attendees.

  • When: 18h September afternoon
  • What: Networking and Keynotes/Panel Discussion
  • For who: Industry C-Levels such as Entrepreneurs, CEO, CFO, Marketing Managers, etc
  • How: Entrance reserved.

See the full 18th Agenda

Technical Conference & Table-Top Exhibition


On day 2, we will have a technical conference and exhibition examining how power systems are undergoing a significant transformation as the world transitions to sustainable energy. Explore the pivotal intersection of technology and environmental stewardship, unveiling strategies, breakthroughs, and challenges as we steer toward a greener future.

The table-top exhibition provides an opportunity for attendees to connect with technical experts from leading Power Electronics companies.

On Sep 19 the Table-Top Exhibition and Technical Conference is open to technicians, engineers, purchase department and R&D.

  • When: 19h September, full-day
  • What: Table-Top Exhibition and Technical Conference
  • For who: Industry technicians,  engineers, purchase department and R&D
  • How: Free entrance upon registration.

See the full 19th Agenda

14:00-14:10

Welcome and Opening

by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

Maurizio Di Paolo Emilio will welcome the conference attendees, introduce the speakers, and walk you through some housekeeping items.


14:00-14:10

Welcome and Opening

by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

Maurizio Di Paolo Emilio will welcome the conference attendees, introduce the speakers, and walk you through some housekeeping items.


14:10-14:40

What a Long Strange Trip It’s Been

Speaker: Alex Lidow, CEO, Efficient Power Conversion (EPC)

GaN devices have passed the tipping point in several applications as this wonderful wide bandgap semiconductor marches toward the obsolescence of the aging silicon MOSFET. In this keynote there will be a brief trip down memory lane to recount some of the key lessons learned beginning with the power MOSFET’s takeover of the power conversion space from the incumbent bipolar transistor. Similarities and differences will be highlighted as one application after another converts from silicon to GaN transistors. The roadmap for the next few years to be discussed at the end is a reflection of these experiences.


14:40-15:10

Vertical Integration in Energy: Adapting to Dynamic Market Demands with Comprehensive Solutions

Speaker: Simon Keeton, Group President, Power Solutions Group, onsemi

This session explores the transformative impacts of Silicon Carbide (SiC) and Silicon IGBT technologies on energy infrastructure and electric vehicles. Discover comprehensive system solutions that optimize efficiency and cost-effectiveness throughout the energy value chain, focusing on solar solutions, energy storage, EV charging, and vehicle electrification. The concept of vertical integration serves as a springboard rather than a finish line. As markets continue to evolve rapidly, the ability to offer comprehensive solutions becomes essential in meeting the dynamic and evolving demands of the market. Learn how these system-level innovations address dynamic market demands in the automotive and industrial sectors, contributing to a more efficient and resilient future.


15:10-15:40

Keynote about latest trends with Power Electronics

Speaker: TBD

More information will follow soon.


15:40-16:10

Exploiting Market Inefficiencies with Power Simulation Tools

Speaker: Mike Engelhardt, QSPICE/LTspice inventor, Qorvo

The evolution and success of the business model of providing cost-free simulation tools is presented in light of fundamental analysis and the Efficient Market Hypothesis. The market inefficiencies exploited the development of LTspice and QSPICE are discussed.


16:10-16:30

Conference Break & Networking Time


16:30-18:00

Executive Panel about SiC & GaN Technologies – Exploring Advancements, Addressing Challenges

Moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

The global wide-bandgap environment has been characterized by expansion and rising industrial acceptance. As technology continues to advance, businesses are amassing a vast assortment of devices that hold the potential to provide advantages across numerous sectors, including industrial, automotive and consumer. Wide-bandgap semiconductors, such as gallium nitride and silicon carbide, are contributing positively to the market by offering novel solutions to challenges encountered by designers in an age where “efficiency” is paramount. This panel discussion convenes executive-level experts in the rapidly expanding field of wide-bandgap semiconductors. Executives will examine these developments in semiconductors, discussing obstacles, opportunities and applications. The barriers impeding extensive adoption will be examined, with a particular focus on the pursuit of enhanced performance and decreased costs.

Panelists
– Cem Basceri, CEO, Qromis, talking about “Empowering GaN Power Electronics with a Scalable GaN-on-QST Manufacturing Platform”
– Gayn Erickson, CEO, Aehr Test Systems, talking about “Wafer Level Test and Burn-in to Increase Reliability and Reduce Costs in WBG Devices”
–  Dr. Thomas Neyer, SVP R&D GaN Technology Development, Infineon, talking about: “It is prime time for wide-bandgap Technology”
– Dr. Victor Veliadis, Professor at North Carolina State University and Executive Director and CTO of PowerAmerica, talking about “Strategic initiatives for mass SiC commercialization


18:00-18:20

After 40 years of history: Assodel’s Perspective on Macro Trends

Speaker: Diego Giordani, Director, Assodel (Associazione Distretti Elettronica in Italia)

More Information will follow soon.


18:20-19:30

Networking Reception

Reception where conference visitors, speakers, and sponsors can engage with each other.



09:30-09:40

Welcome and Opening

by Anne-Françoise Pelé, Editor-in-Chief, EE Times Europe and Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

Anne-Françoise Pelé and Maurizio Di Paolo Emilio will welcome the conference attendees, introduce the speakers, and walk you through a couple of housekeeping items.


09:40-10:25

Panel Discussion: The Role of Power Electronics in Shaping a Sustainable World

Moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

In our pursuit of a greener and more sustainable future, the critical role played by power electronics in enabling the energy transition cannot be overstated. The adoption of renewable energy sources necessitates power electronics solutions that are dependable, adaptable and efficient. The progress made in power electronics serves as the fundamental basis for this paradigm shift, encompassing sectors like grid management, electrified transportation, energy generation and storage optimization, and more. Our panel is focused on bringing together a diverse array of industry pioneers to delve into topics surrounding power electronics, grid optimization, and the advancement of renewable energy systems. Additionally, we aim to explore the business prospects and challenges associated with emerging technologies.

Panelists
– Frank Heidemann, VP & Technology Leader NI, Emerson’s T&M Business Group
– Markus Mosen, CEO, WeEn Semiconductors
– Harald Parzhuber, Manager Renewable Energy Systems, Texas Instruments
– Steve Roberts, Innovation Manager, RECOM


10.25 – 10.55

Exhibition Time

Coffee break and time to visit the exhibition area with leading Power Electronics companies


Conference split into 2 tracks:

Track 1 : Room “Faraday” – moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News

Track 2 : Room “Volta” – moderated by Victor Veliadis, Professor in Electrical and Computer Engineering, North Carolina State University and Filippo Di Giovanni, retired, former Strategic Marketing Manager at ST, currently Contributing Editor for Power Semiconductors



Track 1 / 10:55-11:30

Innovations in Renewable Energy and Next-Gen Transportation

Dr. Peter Friedrichs, Fellow SiC Innovation & Industrialization, Infineon Technologies

The transition towards renewable energy generation combined with storage in stationary battery systems or mobile green hydrogen platforms is inevitable to secure the supply of electricity in the future, especially when e-mobility adds to the landscape of electricity consumers. Multiple energy conversion steps are required to manage this grid of the future, favorably with highest efficiency. Innovations will be required in the area of energy generation, transportation and consumption in order to reduce CO2 emissions. Thus new wide bandgap semiconductors will further gain importance since they enable the required leapfrogs in conversion loss reduction which enables not only less energy waste, but also an optimized system material usage due to shrink of passive elements and cooling setups. The keynote will highlight recent advances in the relevant technologies and the resulting impact towards a greener world based on carbon neutral power electronics.


Track 2 / 10:55-11:30

Keynote: SiC and GaN, towards the transformation of the power semiconductor industry 

Speaker: Edoardo Merli, Executive Vice President, Power Transistor Sub-Group Automotive and Discrete Group, STMicroelectronics

As the world faces climate change and geopolitical uncertainties, innovative technologies are emerging and entering the market, driving significant change across the entire energy industry. Within the semiconductor landscape, power electronics has an important role, enabling the transition to more efficient and sustainable energy systems. Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are at the forefront of innovation. With clear advantages over conventional Si semiconductor devices, WBGs offer increased efficiency and power density, enabling more compact systems and weight reduction, as well as many other benefits in various applications for power conversion. While the world takes its first steps in using these new materials, scaling up the use and the production of these semiconductors is crucial to achieve the green transition.


Track 1 / 11:30-11:55

SiC MOSFETs: Meeting the Power Conversion Industry’s Exact Needs

Speaker: Mrinal K. Das, Senior Director of Technical Marketing – Advanced Power Division, onsemi

SiC MOSFETs are now well established as delivering the performance needed to enable the emerging megatrend toward increased electrification and a sustainable energy infrastructure. The path forward now entails establishing more field-proven reliability statistics and reducing the price premium over incumbent Si products. In any well-designed MOSFET, the gate oxide is typically the weakest part of the structure, but even more so in the case of SiC, given its non-ideal MOS interface. With more than 30 years of intense research scrutiny and more than 10 years in the field, the thermally grown gate oxide for planar MOSFETs has established long intrinsic lifetimes with excellent stability and low field failure rates. With the impending transition to trench MOSFETs, the industry must rebuild the gate oxide foundation before the unit cell density benefits of the trench structure can be realized. As device level innovations continue to drive down SiC costs, a major advancement from the materials side will be the advent of 200mm SiC wafers. The ability to print nearly 2x the number of die provides the opportunity to reduce SiC costs and increase manufacturing capacity to meet the rising demand for SiC-powered applications such as the EV powertrain, DC fast chargers, renewable energy systems, energy storage systems, and power supplies.  


Track 2 / 11:30-11:55

Beyond GaN – an outlook on the next generation of transistors

Speaker: Steve Roberts, Innovation Manager, RECOM

Wide Band Gap (WBG) transistors such as SiC and GaN are gradually becoming mainstream, often replacing older transistor technologies such as IGBT and MOSFET in power switching designs. But now researchers are working on the next generation of transistors with Ultra Wide Band Gap (UWBG), made from strange compounds such as Al-GaN, c-BN, Ga2O3, or even synthetic diamond. What is the band gap, anyway? Why is a wide band gap so important? What advantages will UWBG bring to high power switching transistor circuits?


Track 1 / 11:55-12:20

The Electrification of All Transportation: Silicon Carbide in E-mobility

Speakers: Angelo Sgura, Sales Account Manager and Daniele Viganò, Power Products Field Application Engineer, both Wolfspeed

The global imperative to reduce emissions is driving significant advancements in the transportation sector, which accounts for approximately 20% of global CO2 production. While electric passenger vehicles (EVs) have seen increasing levels of adoption, there is also a growing momentum towards electric mobility within additional modes of transportation. From commercial, construction, and agriculture vehicles to advanced air mobility, marine vessels, and trains, new electrified concepts are emerging all around the world. This presentation highlights the latest innovations in silicon carbide technology that enable reliable, efficient, and cost-effective solutions tailored to power electronics systems throughout these vehicles and machines. Join Wolfspeed for a look at the future of sustainable mobility shaped by silicon carbide.


Track 2 / 11:55-12:20

Power GaN & Digital Control: A Double Revolution Leading the Future of Power Electronics.

Speaker: Thierry Bouchet, CEO, Wise Integration

Thierry Bouchet will present how WiseWare® revolutionizes power electronics by unlocking the full potential of gallium nitride (GaN) through advanced digital control. This double revolution (Wiseware® & WiseGan®) enhances high-frequency switching and optimizes power system performance, setting new standards for energy efficiency and system compactness. Discover how GaN’s unique capabilities, combined with WiseWare® digital control, transform power conversion architectures. Learn how these innovations reduce energy losses, improve power density, and open new applications across various electronic sectors.


Track 1 / 12:20-12:40

Why the future of power electronics in e-mobility is called SiC

Speaker: Gianluca Basile, Field Application Manager, WeEn Semiconductor

This presentation will focus on how SiC technology will accelerate the EV revolution compared to traditional technologies, to overcome the challenges of long-range distance improving power efficiency and reducing losses.


Track 2 / 12:20-12:40

Monolithic bi-directional GaN HEMTs as essential building blocks for single-stage power conversion

Speaker: Dr. Gerald Deboy, Senior Principal, Infineon Technologies

Gallium-Nitride high electron mobility transistors can be extended into power switches blocking voltages in both polarities and conducting current in both directions. The lateral nature of the device concept allows to utilize the physical volume blocking the voltage for both polarities and enables hence a compact and cost-effective realization of a monolithic 4-quadrant switch. These devices are essential building blocks to combine power factor correction and isolating DC/DC power conversion into a single power stage, thus enabling more compact and efficient AC/DC or DC/AC designs. The talk will introduce the device concept and show use cases for a number of market segments.


12.40 – 13.40

Lunch Break and Exhibition Time

Lunch break and time to visit the table-top exhibition with leading Power Electronics companies


Track 1 / 13:40-14:05

Application specific SiC power devices – The CoolSiC™ MOSFETs G2 enables new solutions for modern power electronics

Speaker: Dr. Peter Friedrichs, Fellow SiC Innovation & Industrialization, Infineon Technologies

SiC MOSFETs demonstrate superior performance, showcasing highest efficiency, compact footprints, and significantly contribute to CO2 savings. These attributes are key drivers behind the accelerated rollout of wide bandgap-based power switches across a wide range of operating modes and applications. With the introduction of the second generation of CoolSiC™ MOSFETs, Infineon sets a significant step forward in achieving enhanced performance with trench-based SiC transistors while assuring the highest reliability as has been proven in the field with the CoolSiC™ MOSFET G1 technology for the last seven years. Whether the focus is on soft or hard switching or if partial load operation is a concern, the Generation 2 SiC MOSFETs from Infineon offer exceptional Figures of Merit (FOMs). Additionally, robustness features such as overload capability, avalanche rating, and .XT package interconnect technologies deliver substantial added value for the users. Incorporating new package platforms and expanding the product range to include 400 V rated devices mark the initial phase in the ongoing rollout. The presentation will provide comprehensive insights into these various aspects.


Track 2 / 13:40-14:05

Robust GaN Power ICs Drive into High-Power, High-Reliability Systems

Speaker: Alessandro Squeri, European Sr. Director Sales, Navitas Semiconductor

Since the first GaN power IC was qualified in 2014, GaN now dominates new design-wins in the mobile fast-charging market but has struggled to ‘break the glass ceiling’ to enter high-power markets with tough environmental, thermal, and critical system-test requirements. A new, rugged platform – GaNSafe – reliably delivers high power, high efficiency and application-specific protection features to penetrate the EV, solar and AI data center markets. High power comes with thermally-adept TOLL and TOLT packaging, and delivers high switching speeds and easy-to-use programmable functions, so GaN’s promise of high power density can be achieved, with a complete system approach, that meets extreme voltage and short-circuit current stresses.


Track 1 / 14:05-14:30

Challenges of WBG Devices Burn-In and Testing – Integration of New Stress and Test Features in the EDA Solutions

Speakers: Alessandro Polpetta, Technical Director, and Andrea Lucaroni, Business Development Manager, both Eda Industries

The WBG device technology is still relatively recent. This makes the definition of standards for Quality and Reliability verifications of such devices even more than usual constantly evolving. In recent years, the deepening of failure mechanisms and the definition of increasingly effective stress conditions have resulted in a whole series of new features being introduced. Body Diode stress, Dynamic Gate stress as well as HTFB stress represent only a few examples of this. In this presentation, EDA Industries, always working in the burn-in and testing of WBG devices, will share the most important stress and test features recently integrated into its both package and wafer-level solutions for the static and dynamic characterization of WBG Devices. The benefits of these features will impact all along the semiconductor chain, from Design and R&D to Production.


Track 2 / 14:05-14:30

Price competitive and highly reliable GaN power devices make them a no-brainer for today’s power system solutions

Speaker: Denis Marcon, General Manager, Innoscience Europe

Gallium Nitride (GaN) power devices are the next-generation technology capable of outperforming standard Silicon (Si) power devices in both AC-DC and DC-DC applications. With a Ron x Qg ten times smaller than SI, they allow operations at high switching frequency without penalty in efficiency. In this presentation, we will show how to take advantage of discrete (InnoGaN™) or integrated (SolidGaN™) Innoscience GaN power devices (30V-700V) to enhance the performance of AC-DC and DC-DC converters and to maximize their efficiency whilst reducing their size and simplify their architecture. We will also present several use cases covering various consumer and industrial applications, such as LED drivers, three phase inverters for white goods and HVAC systems, high power PFC , power supply units (PSU) and DC-DC converters for datacenters, motor drive for battery powered motors, etc.We will conclude the presentation by showing how it is now possible for Innoscience to provide price-competitive GaN power devices by leveraging economies of scale combined with 8-inch GaN-on-Si wafers (about twice the number of devices per wafer than 6-inch processes) and high yield.


Track 1 / 14:30-14:55

Technical Presentation about Power Electronics Applications, Solutions & Products

Speaker: TBD

More Information will follow soon


Track 2 / 14:30-14:55

Propelling GaN electronics adoption with large diameter and CMOS friendly GaN-on-QST® manufacturing platform

Speaker: Dr. Vladimir Odnoblyudov, Co-Founder and CTO, QROMIS

The CMOS fab-friendly and SEMI standard thickness 200 mm QST® (QROMIS Substrate Technology) substrates enable fabrication of commercial high-performance GaN power devices with breakdown voltages ranging from 100 V to 2000 V. This is achieved by utilizing a substrate core with the coefficient of thermal expansion (CTE) matched to GaN over a wide temperature range. Resulting fully integrated QST® substrates are breakage-free and enable a wide variety of power device architectures such as lateral, vertical, or integrated circuits. In this work, results from the production of 200 mm SEMI standard thickness QST®-based 650V E-mode GaN HEMT devices on a commercial, high volume CMOS foundry manufacturing platform are presented. In addition, the results from the development work on 1200V E-mode HEMTs, 650V wafer-level monolithically integrated circuits (ICs), and semi-vertical / vertical power devices will also be discussed.


Track 1 / 14:55-15:15

Technical Presentation about Power Electronics Applications, Solutions & Products

Speaker: TBD

More Information will follow soon


Track 2 / 14:55-15:15

Technical Presentation about Power Electronics Applications, Solutions & Products

Speaker: TBD

More Information will follow soon


15.15 – 15.45

Exhibition Time

Coffee break and time to visit the exhibition area with leading Power Electronics companies


Track 1 / 15:45-16:10

Technical Presentation about Power Electronics Applications, Solutions & Products

Speaker: TBD

More Information will follow soon


Track 2 / 15:45-16:10

A Fresh Perspective on Foster and Cauer – Making Better Use of Thermal Models

Speaker: Dr. Alexander Weyman, Modeling & Simulation Scientist, Plexim

In modern simulations of power electronics, the integration of accurate thermal models has become an indispensable part of ensuring system reliability and efficiency. In practice, lumped-element thermal chain models have proven to be a powerful tool for the accurate description of heat transfer dynamics and junction temperature estimation. In this talk, we will discover how to avoid common pitfalls encountered when working with Foster- and Cauer-type thermal chains. Starting with the proper measurement of thermal impedance curves, we will move on to a description of the difficulties that arise in extracting suitable thermal chain parameters from these curves and the way to overcome them. Having obtained well-parametrized thermal chains, we will then demonstrate best practices for their use. By arriving at more advanced modeling principles of thermal cross-talk, we aim to provide a complete picture for the effective use of thermal chains to achieve state-of-the-art power electronics simulation.


Track 1 / 16:10-16:35

High-Voltage SiC Accelerates Heavy-Duty EV Trucking

Speaker: Matteo Uccelli, European FAE Manager, Navitas Semiconductor

Heavy-duty vehicles (HDV) – trucks and coaches – create over 25% of greenhouse gas emissions from EU road transport. In January 2024, the EU Parliament confirmed the EU Commission’s target to reduce CO2 by 90% (for 2040 vs 2021 levels). By 2030, the EU target is for 400,000 non-diesel HDVs to be on the road, with at least 50,000 publicly-accessible roadside chargers, of which two-thirds are to be compatible with the Megawatt Charging System (MCS) per SAE J3271, for up to 3.75 MW fast charging using 1,250V rails. High-voltage silicon carbide (SiC) MOSFETs are critical to meet the efficiency and reliability needs for MCS installations with 1,700 – 3,300 V devices a focus. Traditionally, planar or trench designs have been used but with significant manufacturability, reliability and cost issues. Trench-assisted, planar-gate technology is a no-compromise hybrid solution with the smallest die size, lowest increase in resistance thermal coefficient and high reliability.


Track 2 / 16:10-16:35

Technical Presentation about Power Electronics Applications, Solutions & Products

Speaker: TBD

More Information will follow soon


16:35-16:55

WBG, Renewables: Technology Innovations and Market Dynamics

Speakers: Amine Allouche, Technology and Cost Analyst, and Milan Rosina, Principal Analyst, both Yole Group

The power electronics device market is projected to reach $36.5 billion by 2029, according to Yole Group. Key factors fueling this growth include the electrification of everything, renewable energy generation and energy savings. First, Yole Group will delve into the current state of wide-bandgap (WBG) power semiconductor technology and explore the prevailing market trends shaping its adoption and growth trajectory. Then, Yole Group will provide the market drivers and market potential for renewables and highlight the market and technology synergies between renewable energy and other power electronic applications, particularly stationary battery systems.


16.55 – 17.10

Closing Remarks & Prize Draw

Join this session for the chance to win a 100€ Amazon Gift Card