Agenda

Maurizio Di Paolo Emilio will welcome the conference attendees, introduce the speakers, and walk you through some housekeeping items.

GaN devices have passed the tipping point in several applications as this wonderful wide bandgap semiconductor marches toward the obsolescence of the aging silicon MOSFET. In this keynote there will be a brief trip down memory lane to recount some of the key lessons learned beginning with the power MOSFET’s takeover of the power conversion space from the incumbent bipolar transistor. Similarities and differences will be highlighted as one application after another converts from silicon to GaN transistors. The roadmap for the next few years to be discussed at the end is a reflection of these experiences.

This session explores the transformative impacts of Silicon Carbide (SiC) and Silicon IGBT technologies on energy infrastructure and electric vehicles. Discover comprehensive system solutions that optimize efficiency and cost-effectiveness throughout the energy value chain, focusing on solar solutions, energy storage, EV charging, and vehicle electrification. The concept of vertical integration serves as a springboard rather than a finish line. As markets continue to evolve rapidly, the ability to offer comprehensive solutions becomes essential in meeting the dynamic and evolving demands of the market. Learn how these system-level innovations address dynamic market demands in the automotive and industrial sectors, contributing to a more efficient and resilient future.

The automotive industry is undergoing a profound transformation. The shift towards electrification, automated driving, and data-driven services is generating uncertainties and many traditional car manufacturers are struggling. To keep their competitiveness, they must adapt to fluctuating market demands, to streamline design processes and shorten development cycles. The Semiconductor compartment plays a crucial role in this transformation. NXP is stepping up embracing Lego approaches and collaborating with customers and partners to offer and comprehensive solutions. NXP’s CoreRide platform is the example, representing the next milestone in overcoming the software and hardware integration challenges blocking fast adoption of SDVs.

The evolution and success of the business model of providing cost-free simulation tools is presented in light of fundamental analysis and the Efficient Market Hypothesis. The market inefficiencies exploited the development of LTspice and QSPICE are discussed.

The global wide-bandgap environment has been characterized by expansion and rising industrial acceptance. As technology continues to advance, businesses are amassing a vast assortment of devices that hold the potential to provide advantages across numerous sectors, including industrial, automotive and consumer. Wide-bandgap semiconductors, such as gallium nitride and silicon carbide, are contributing positively to the market by offering novel solutions to challenges encountered by designers in an age where “efficiency” is paramount. This panel discussion convenes executive-level experts in the rapidly expanding field of wide-bandgap semiconductors. Executives will examine these developments in semiconductors, discussing obstacles, opportunities and applications. The barriers impeding extensive adoption will be examined, with a particular focus on the pursuit of enhanced performance and decreased costs.

Panelists
– Cem Basceri, CEO, Qromis, talking about “Empowering GaN Power Electronics with a Scalable GaN-on-QST Manufacturing Platform”
– Gayn Erickson, CEO, Aehr Test Systems, talking about “Wafer Level Test and Burn-in to Increase Reliability and Reduce Costs in WBG Devices”
–  Dr. Thomas Neyer, SVP R&D GaN Technology Development, Infineon, talking about: “It is prime time for wide-bandgap Technology”
– Dr. Victor Veliadis, Professor at North Carolina State University and Executive Director and CTO of PowerAmerica, talking about “Strategic initiatives for mass SiC commercialization

In the age of AI, what is the value of market analyzes and community knowledge sharing? Why an association in 2024? Who is Assodel, what does it represent in the electronics supply chain in Italy and why is its trend growing. Diego will also talk about trends and and share testimonials.

Maurizio Di Paolo Emilio will welcome the conference attendees, introduce the speakers, and walk you through a couple of housekeeping items.

In our pursuit of a greener and more sustainable future, the critical role played by power electronics in enabling the energy transition cannot be overstated. The adoption of renewable energy sources necessitates power electronics solutions that are dependable, adaptable and efficient. The progress made in power electronics serves as the fundamental basis for this paradigm shift, encompassing sectors like grid management, electrified transportation, energy generation and storage optimization, and more. Our panel is focused on bringing together a diverse array of industry pioneers to delve into topics surrounding power electronics, grid optimization, and the advancement of renewable energy systems. Additionally, we aim to explore the business prospects and challenges associated with emerging technologies.

Panelists
– Frank Heidemann, VP & Technology Leader NI, Emerson’s T&M Business Group
– Markus Mosen, CEO, WeEn Semiconductors
– Harald Parzhuber, Manager Renewable Energy Systems, Texas Instruments
– Steve Roberts, Innovation Manager, RECOM

The transition towards renewable energy generation combined with storage in stationary battery systems or mobile green hydrogen platforms is inevitable to secure the supply of electricity in the future, especially when e-mobility adds to the landscape of electricity consumers. Multiple energy conversion steps are required to manage this grid of the future, favorably with highest efficiency. Innovations will be required in the area of energy generation, transportation and consumption in order to reduce CO2 emissions. Thus new wide bandgap semiconductors will further gain importance since they enable the required leapfrogs in conversion loss reduction which enables not only less energy waste, but also an optimized system material usage due to shrink of passive elements and cooling setups. The keynote will highlight recent advances in the relevant technologies and the resulting impact towards a greener world based on carbon neutral power electronics.

As the world faces climate change and geopolitical uncertainties, innovative technologies are emerging and entering the market, driving significant change across the entire energy industry. Within the semiconductor landscape, power electronics has an important role, enabling the transition to more efficient and sustainable energy systems. Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are at the forefront of innovation. With clear advantages over conventional Si semiconductor devices, WBGs offer increased efficiency and power density, enabling more compact systems and weight reduction, as well as many other benefits in various applications for power conversion. While the world takes its first steps in using these new materials, scaling up the use and the production of these semiconductors is crucial to achieve the green transition.

SiC MOSFETs are now well established as delivering the performance needed to enable the emerging megatrend toward increased electrification and a sustainable energy infrastructure. The path forward now entails establishing more field-proven reliability statistics and reducing the price premium over incumbent Si products. In any well-designed MOSFET, the gate oxide is typically the weakest part of the structure, but even more so in the case of SiC, given its non-ideal MOS interface. With more than 30 years of intense research scrutiny and more than 10 years in the field, the thermally grown gate oxide for planar MOSFETs has established long intrinsic lifetimes with excellent stability and low field failure rates. With the impending transition to trench MOSFETs, the industry must rebuild the gate oxide foundation before the unit cell density benefits of the trench structure can be realized. As device level innovations continue to drive down SiC costs, a major advancement from the materials side will be the advent of 200mm SiC wafers. The ability to print nearly 2x the number of die provides the opportunity to reduce SiC costs and increase manufacturing capacity to meet the rising demand for SiC-powered applications such as the EV powertrain, DC fast chargers, renewable energy systems, energy storage systems, and power supplies.  

Wide Band Gap (WBG) transistors such as SiC and GaN are gradually becoming mainstream, often replacing older transistor technologies such as IGBT and MOSFET in power switching designs. But now researchers are working on the next generation of transistors with Ultra Wide Band Gap (UWBG), made from strange compounds such as Al-GaN, c-BN, Ga₂O₃, or even synthetic diamond. What is the band gap, anyway? Why is a wide band gap so important? What advantages will UWBG bring to high power switching transistor circuits?

The global imperative to reduce emissions is driving significant advancements in the transportation sector, which accounts for approximately 20% of global CO2 production. While electric passenger vehicles (EVs) have seen increasing levels of adoption, there is also a growing momentum towards electric mobility within additional modes of transportation. From commercial, construction, and agriculture vehicles to advanced air mobility, marine vessels, and trains, new electrified concepts are emerging all around the world. This presentation highlights the latest innovations in silicon carbide technology that enable reliable, efficient, and cost-effective solutions tailored to power electronics systems throughout these vehicles and machines. Join Wolfspeed for a look at the future of sustainable mobility shaped by silicon carbide.

Thierry Bouchet will present how WiseWare® revolutionizes power electronics by unlocking the full potential of gallium nitride (GaN) through advanced digital control. This double revolution (Wiseware® & WiseGan®) enhances high-frequency switching and optimizes power system performance, setting new standards for energy efficiency and system compactness. Discover how GaN’s unique capabilities, combined with WiseWare® digital control, transform power conversion architectures. Learn how these innovations reduce energy losses, improve power density, and open new applications across various electronic sectors.

This presentation will focus on how SiC technology will accelerate the EV revolution compared to traditional technologies, to overcome the challenges of long-range distance improving power efficiency and reducing losses.

Gallium-Nitride high electron mobility transistors can be extended into power switches blocking voltages in both polarities and conducting current in both directions. The lateral nature of the device concept allows to utilize the physical volume blocking the voltage for both polarities and enables hence a compact and cost-effective realization of a monolithic 4-quadrant switch. These devices are essential building blocks to combine power factor correction and isolating DC/DC power conversion into a single power stage, thus enabling more compact and efficient AC/DC or DC/AC designs. The talk will introduce the device concept and show use cases for a number of market segments.

SiC MOSFETs demonstrate superior performance, showcasing highest efficiency, compact footprints, and significantly contribute to CO2 savings. These attributes are key drivers behind the accelerated rollout of wide bandgap-based power switches across a wide range of operating modes and applications. With the introduction of the second generation of CoolSiC™ MOSFETs, Infineon sets a significant step forward in achieving enhanced performance with trench-based SiC transistors while assuring the highest reliability as has been proven in the field with the CoolSiC™ MOSFET G1 technology for the last seven years. Whether the focus is on soft or hard switching or if partial load operation is a concern, the Generation 2 SiC MOSFETs from Infineon offer exceptional Figures of Merit (FOMs). Additionally, robustness features such as overload capability, avalanche rating, and .XT package interconnect technologies deliver substantial added value for the users. Incorporating new package platforms and expanding the product range to include 400 V rated devices mark the initial phase in the ongoing rollout. The presentation will provide comprehensive insights into these various aspects.

Since the first GaN power IC was qualified in 2014, GaN now dominates new design-wins in the mobile fast-charging market but has struggled to ‘break the glass ceiling’ to enter high-power markets with tough environmental, thermal, and critical system-test requirements. A new, rugged platform – GaNSafe – reliably delivers high power, high efficiency and application-specific protection features to penetrate the EV, solar and AI data center markets. High power comes with thermally-adept TOLL and TOLT packaging, and delivers high switching speeds and easy-to-use programmable functions, so GaN’s promise of high power density can be achieved, with a complete system approach, that meets extreme voltage and short-circuit current stresses.

The WBG device technology is still relatively recent. This makes the definition of standards for Quality and Reliability verifications of such devices even more than usual constantly evolving. In recent years, the deepening of failure mechanisms and the definition of increasingly effective stress conditions have resulted in a whole series of new features being introduced. Body Diode stress, Dynamic Gate stress as well as HTFB stress represent only a few examples of this. In this presentation, EDA Industries, always working in the burn-in and testing of WBG devices, will share the most important stress and test features recently integrated into its both package and wafer-level solutions for the static and dynamic characterization of WBG Devices. The benefits of these features will impact all along the semiconductor chain, from Design and R&D to Production.

Gallium Nitride (GaN) power devices are the next-generation technology capable of outperforming standard Silicon (Si) power devices in both AC-DC and DC-DC applications. With a Ron x Qg ten times smaller than SI, they allow operations at high switching frequency without penalty in efficiency. In this presentation, we will show how to take advantage of discrete (InnoGaN™) or integrated (SolidGaN™) Innoscience GaN power devices (30V-700V) to enhance the performance of AC-DC and DC-DC converters and to maximize their efficiency whilst reducing their size and simplify their architecture. We will also present several use cases covering various consumer and industrial applications, such as LED drivers, three phase inverters for white goods and HVAC systems, high power PFC , power supply units (PSU) and DC-DC converters for datacenters, motor drive for battery powered motors, etc.We will conclude the presentation by showing how it is now possible for Innoscience to provide price-competitive GaN power devices by leveraging economies of scale combined with 8-inch GaN-on-Si wafers (about twice the number of devices per wafer than 6-inch processes) and high yield.

The history of the power industry is fascinating and one full of amazing, genius level engineers who are making power solutions more efficient, lighter, smarter and much more. Although it is difficult – if not impossible – to name all of them, one thing they all have in common is ‘curiosity’. For many of us Albert Einstein influenced our destiny and I cannot mention him without a quote, one that is also my own mantra: “The important thing is to not stop questioning. Curiosity has its own reason for existing.” This is the reason why for more than 120 years power designers have performed miracles and will continue to break ‘unbreakable limits’.

The CMOS fab-friendly and SEMI standard thickness 200 mm QST® (QROMIS Substrate Technology) substrates enable fabrication of commercial high-performance GaN power devices with breakdown voltages ranging from 100 V to 2000 V. This is achieved by utilizing a substrate core with the coefficient of thermal expansion (CTE) matched to GaN over a wide temperature range. Resulting fully integrated QST® substrates are breakage-free and enable a wide variety of power device architectures such as lateral, vertical, or integrated circuits. In this work, results from the production of 200 mm SEMI standard thickness QST®-based 650V E-mode GaN HEMT devices on a commercial, high volume CMOS foundry manufacturing platform are presented. In addition, the results from the development work on 1200V E-mode HEMTs, 650V wafer-level monolithically integrated circuits (ICs), and semi-vertical / vertical power devices will also be discussed.

Electronic components might require different protection methods. What is standard solution cause thermal insulation of protected components leading to undesired temperature rise ? In this presentation solutions combining protection and thermal conductivity with special granulates will be discussed.

More Information will follow soon

The expansion of DC charging infrastructure is vital for the acceleration of e-mobility. It not only enhances the practicality of EVs but also supports environmental goals and sustainable economic growth. Developing a DC charger with Silicon Carbide technology can lead to significant improvements in efficiency, size, weight, and overall performance, which are critical factors in the rapidly growing electric vehicle market and other industries requiring high performances. When designing a DC charger, engineers can choose between using a single high power converter or a scalable approach. This second option offers several advantages to engineers that can select a much larger variety of power devices either Power Modules or Discretes so getting unmatched flexibility in the design optimization.

In modern simulations of power electronics, the integration of accurate thermal models has become an indispensable part of ensuring system reliability and efficiency. In practice, lumped-element thermal chain models have proven to be a powerful tool for the accurate description of heat transfer dynamics and junction temperature estimation. In this talk, we will discover how to avoid common pitfalls encountered when working with Foster- and Cauer-type thermal chains. Starting with the proper measurement of thermal impedance curves, we will move on to a description of the difficulties that arise in extracting suitable thermal chain parameters from these curves and the way to overcome them. Having obtained well-parametrized thermal chains, we will then demonstrate best practices for their use. By arriving at more advanced modeling principles of thermal cross-talk, we aim to provide a complete picture for the effective use of thermal chains to achieve state-of-the-art power electronics simulation.

Heavy-duty vehicles (HDV) – trucks and coaches – create over 25% of greenhouse gas emissions from EU road transport. In January 2024, the EU Parliament confirmed the EU Commission’s target to reduce CO2 by 90% (for 2040 vs 2021 levels). By 2030, the EU target is for 400,000 non-diesel HDVs to be on the road, with at least 50,000 publicly-accessible roadside chargers, of which two-thirds are to be compatible with the Megawatt Charging System (MCS) per SAE J3271, for up to 3.75 MW fast charging using 1,250V rails. High-voltage silicon carbide (SiC) MOSFETs are critical to meet the efficiency and reliability needs for MCS installations with 1,700 – 3,300 V devices a focus. Traditionally, planar or trench designs have been used but with significant manufacturability, reliability and cost issues. Trench-assisted, planar-gate technology is a no-compromise hybrid solution with the smallest die size, lowest increase in resistance thermal coefficient and high reliability.

WBG technologies such as SiC and GaN offer improved performance over traditional Silicon semiconductors. However, to get all the benefits of WBG technologies you must redesign the complete system around these high performance devices. Careful consideration of gate drivers is need to ensure the devices are operated safely and optimized for optimal performance. Since WBG technologies can be switched much faster the system switching frequency can be increased requiring new passive components that work at these higher frequencies. Even new thermal management techniques may need to be explored to further increase the power density of the new system that utilizes WBG technologies.

The power electronics device market is projected to reach $36.5 billion by 2029, according to Yole Group. Key factors fueling this growth include the electrification of everything, renewable energy generation and energy savings. First, Yole Group will delve into the current state of wide-bandgap (WBG) power semiconductor technology and explore the prevailing market trends shaping its adoption and growth trajectory. Then, Yole Group will provide the market drivers and market potential for renewables and highlight the market and technology synergies between renewable energy and other power electronic applications, particularly stationary battery systems.